7-223 9 7 vp0120 advanced dmos technology these enhancement-mode (normally-off) transistors utilize a vertical dmos structure and supertex? well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertex? vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. note: see package outline section for dimensions. p-channel enhancement-mode v ertical dmos fets package options absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. applications motor controls converters amplifiers switches power supply circuits drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) features free from secondary breakdown low power drive requirement ease of paralleling low c iss and fast switching speeds excellent thermal stability integral source-drain diode high input impedance and high gain complementary n- and p-channel devices order number / package bv dss /r ds(on) i d(on) bv dgs (max) (min) to-92 die ? -200v 25 ? -100ma vp0120n3 vp0120nd ? mil visual screening available ordering information t o-92 s g d C obsolete C
7-224 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v v dd r gen 0v -10v symbol parameter min typ max unit conditions bv dss -200 v gs(th) gate threshold voltage -1.5 -3.5 v v gs = v ds , i d = -1.0ma ? v gs(th) change in v gs(th) with temperature 6.0 mv/ ci d = -1.0ma, v gs = v ds i gss gate body leakage -100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current -10 av gs = 0v, v ds = max rating v gs = 0v, v ds = 0.8 max rating t a = 125 c i d(on) on-state drain current -100 -400 v gs = -5v, v ds = -25v -350 -750 v gs = -10v, v ds = -25v r ds(on) 25 40 v gs = -5v, i d = -50ma 15 25 v gs = -10v, i d = -100ma ? r ds(on) change in r ds(on) with temperature 0.6 %/ cv gs = -10v, i d = -100ma g fs forward transconductance 50 70 m v ds = -25v, i d = -100ma c iss input capacitance 50 60 c oss common source output capacitance 10 30 pf c rss reverse transfer capacitance 5 10 t d(on) turn-on delay time 4 10 t r rise time 4 10 t d(off) turn-off delay time 4 10 t f fall time 4 11 v sd diode forward voltage drop -1.0 v i sd = -0.5a, v gs = 0v t rr reverse recovery time 500 ns i sd = -0.5a, v gs = 0v notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. vp0120 switching waveforms and test circuit package i d (continuous)* i d (pulsed) power dissipation jc ja i dr *i drm @ t c = 25 c c/w c/w to-92 -0.1a -0.35a 1.0w 125 170 -0.1a -0.35a * i d (continuous) is limited by max rated t j . thermal characteristics ma v gs = 0v, v ds = -25v f = 1 mhz drain-to-source breakdown voltage static drain-to-source on-state resistance -1 ma vi d = -1.0ma, v gs = 0v electrical characteristics (@ 25 c unless otherwise specified) v dd = -25v ns i d = -350ma r gen = 25 ? ? ? C obsolete C
7-225 9 7 t ypical performance curves vp0120 output characteristics 0 -10 -20 -30 -50 -40 v ds (volts) i d (amperes) v ds (volts) i d (amperes) saturation characteristics -0.5 -0.4 -0.3 -0.2 -0.1 0 0-2-4- 6 -10 -8 maximum rated safe operating area -0.1 -1.0 -10 -0.01 thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 transconductance vs. drain current 140 120 100 80 60 40 0 -1.0 -0.2 -0.4 -0.6 -0.8 power dissipation vs. case temperature 0 150 100 50 25 20 15 10 5 0 125 75 25 d p (watts) to-92 p d = 1w t c = 25 c t c = 25 c 0 -1000 -100 -10 t a = -55 c t a = 25 c
t a = 125 c v ds = -25v v gs = -10v -1.0 -0.8 -0.6 -0.4 -0.2 0 v gs = -10v -6v -8v to-92 -8v -4v -6v -4v 0 to-92 (dc) g fs (millisiemens) i d (amperes) t c ( c) v ds (volts) i d (amperes) t p (seconds) C obsolete C
7-226 vp0120 t ypical performance curves gate drive dynamic characteristics v (th) and r ds variation with temperature on-resistance vs. drain current transfer characteristics capacitance vs. drain-to-source voltage 80 60 40 20 0 c (picofarads) bv dss variation with temperature 0 -10 -20 -30 -40 0-2- 4-6-8-10 -50 0 50 100 150 1.10 1.06 1.02 0.98 0.94 0.90 2.0 1.6 1.2 0.8 0.4 0 -50 0 50 100 150 -1.0 -0.8 -0.6 -0.4 -0.2 v ds = -25v t a = -55 c t a = 25 c t a = 125 c f = 1mhz -10 -8 -6 -4 -2 0.2 0.4 0.6 0.8 1.0 0 100 pf v ds = -40v v ds = -10v 50pf 100 80 60 40 20 0 -1.5 -0.3 -0.6 -0.9 -1.2 v gs = -5v v gs = -10v 0 0 0 v (th) @ -1.0ma r ds(on) @ -10v, -100ma r ds(on) @ -5v, -50ma 1.25 1.0 0.75 100 pf r ds(on) (ohms) bv dss (normalized) t j ( c) i d (amperes) t j ( c) v gs(th) (normalized) v gs (volts) i d (amperes) r ds(on) (normalized) q g (nanocoulombs) v gs (volts) v ds (volts) 0.4 c iss c oss c rss C obsolete C
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